Akiyama, T.Briand, D.de Rooij, N. F.2012-08-232012-08-232012-08-23201210.1088/0960-1317/22/8/085034https://infoscience.epfl.ch/handle/20.500.14299/85011WOS:000306649000034This paper presents the experimentally obtained gauge factor (GF) of 4H-SiC piezoresistors, fabricated out of the n-type epitaxial layer and characterized on millimeter-size SiC cantilever beams at room temperature. It was found that the GF is dependent on the piezoresistor's length and width. Piezoresistors narrower than approximately 30 mu m showed a width-dependent GF. The highest GF of 20.8 was obtained with a single element piezoresistor in transverse orientation. In longitudinal orientation, the highest GF was -10, which was obtained with a clustered piezoresistor with plural identical elements. Essential factors to consider for the design of optimum 4H-SiC piezoresistors for a Wheatstone bridge configuration are presented.text::journal::journal article::research article