Nicolay, S.Benkhaira, M.Ding, L.Escarre, J.Bugnon, G.Meillaud, F.Ballif, C.2012-12-202012-12-202012-12-20201210.1016/j.solmat.2012.05.016https://infoscience.epfl.ch/handle/20.500.14299/87531WOS:000308386000007In thiswork,itisshownthatvariationsintheratioofoxygentozincprecursorsatconstant temperatureallowchangingthesurfacemorphologyofzincoxide(ZnO)filmsdepositedbylow- pressuremetalorganicchemicalvapordeposition,whilekeepingthesheetresistanceandtransparency of thelayersconstant.ThisallowsdevelopingZnOlayerscombininginterestingpropertiessuchaslow surface roughness(below15nm)andlowsheetresistance(below15 O/&). Moregenerally,itisshown that thepyramidalfeaturedensitycanbecontrolledbytuningtheprecursorflows.Thisleadstofilm surfacescharacterizedbyzoneswitharoughmorphologymixedwithzoneswithalmostflatfeatures. Therefore,byusingthistechnique,thelight-scatteringabilityofafilmcanbecarefullytunedthrough its surfacemorphologywithoutaffectingtheconductivityortransparencyofthelayer.Thisprovidesan efficienttooltooptimizethefrontelectrodeofthin-filmsiliconsolarcellstoachievethebestpossible combinationofopen-circuitvoltage,fillfactorandphoto-generatedcurrent.Thepresentedsolutionis an in-situprocessachievableinstandarddepositionconditionsmakingiteasilyup-scalablewith existingproductionequipment.TCOZnoCVDThin filmsiliconControl of CVD-deposited ZnO films properties through water/DEZ ratio: Decoupling of electrode morphology and electrical characteristicstext::journal::journal article::research article