High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

Simeonov, D.Feltin, E.Altoukhov, A.Castiglia, A.Carlin, J. F.Butte, R.Grandjean, N.2010-10-052010-10-052010-10-05200810.1063/1.2917452https://infoscience.epfl.ch/handle/20.500.14299/55126WOS:000255524000002The authors report a technique for selective wet chemical etching of an AlInN sacrificial layer lattice-matched to GaN for the fabrication of air-gap photonic structures. It is used to demonstrate high quality factor (Q) microdisk cavities. Whispering gallery modes are observed in the photoluminescence spectra of InGaN/GaN quantum wells (QWs) embedded in the GaN microdisks. Q factors of up to 3500 are obtained. The measured Qs are found to be limited by the QW absorption. Room temperature laser action is achieved for a wide spectral range (409-475 nm) with a threshold down to 166 kW/cm(2). (C) 2008 American Institute of Physics.LASERSGANHETEROSTRUCTURESHigh quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layerstext::journal::journal article::research article