Moret, N.Oberli, D. Y.Dwir, B.Rudra, A.Kapon, E.2010-03-262010-03-262010-03-26200810.1063/1.2970987https://infoscience.epfl.ch/handle/20.500.14299/48882WOS:000260944100043The diffusivity of photogenerated electron-hole pairs in weakly disordered GaAs/AlGaAs V-groove quantum wires was measured using a photoluminescence (PL) time-of-flight technique. It is shown that the electron-hole pair diffusion is thermally activated above about 50 K. Exciton localization is observed in micro-PL (mu PL) spectra at low temperature. A reduction in the Stokes shift is found to accompany the increase in the diffusion coefficient. Nevertheless, localization-related features in the mu PL spectra disappear at intermediate temperatures, before measurable diffusion occurs.aluminium compoundsdiffusionexcitonsgallium arsenideIII-V semiconductorsphotoluminescencesemiconductor quantum wirestime of flight spectraSemiconductor NanostructuresExcitonsMobilityWellsThermalizationDependencetext::journal::journal article::research article