High Fundamental Mode Power, High Speed InAlGaAs/AlGaAs 1310 and 1550-nm Wafer-Fused VCSELs

Sirbu, A.Mereuta, A.Caliman, A.Iakovlev, V.Suruceanu, G.Kapon, E.2011-12-162011-12-162011-12-16200910.1364/AOE.2008.SuG2https://infoscience.epfl.ch/handle/20.500.14299/74563WOS:000296471700094InAlGaAs/AlGaAs-based wafer-fused long-wavelength VCSELs with tunnel junction injection emitting in the 1310 nm and 1550 nm bands show high single-mode output and high speed modulation capabilities of 10 Gbps. Fundamental emission close to 6 mW at room temperature and 2.5 mW at 80 degrees C for both 1310 nm and 1550 nm devices is demonstrated for the first time. (C)2008 Optical Society of AmericaHigh-TemperatureWavelengthModulationDbrsHigh Fundamental Mode Power, High Speed InAlGaAs/AlGaAs 1310 and 1550-nm Wafer-Fused VCSELstext::conference output::conference proceedings::conference paper