Thomet, Jonathan EmanuelSingh, Aman KamleshRoueche, Melanie NellyToggwyler, NilsHaug, Franz-JosefChristmann, GabrielNicolay, SylvainBallif, ChristopheWyrsch, NicolasHessler-Wyser, AichaBoccard, Mathieu2022-11-212022-11-212022-11-212022-12-0110.1116/6.0002039https://infoscience.epfl.ch/handle/20.500.14299/192403WOS:000880128900001This paper reports on the fabrication of In xGa 1 - xN (InGaN) layers with various compositions ranging from InN to GaN using a cost-effective low-temperature plasma-enhanced chemical vapor deposition (PECVD) method and analyzes the influence of deposition parameters on the resulting films. Single-phase nanocrystalline InGaN films with crystallite size up to 30 nm are produced with deposition temperatures in the range of 180-250 ? using the precursors trimethylgallium, trimethylindium, hydrogen, nitrogen, and ammonia in a parallel-plate type RF-PECVD reactor. It is found that growth rate is a primary determinant of crystallinity, with rates below 6 nm/min producing the most crystalline films across a range of several compositions. Increasing In content leads to a decrease in the optical bandgap, following Vegard's law, with bowing being more pronounced at higher growth rates. Significant free-carrier absorption is observed in In-rich films, suggesting that the highly measured optical bandgap (about 1.7 eV) is due to the Burstein-Moss shift. (C) 2022 Author(s).Materials Science, Coatings & FilmsPhysics, AppliedMaterials SciencePhysicsmolecular-beam epitaxyamorphous ganingancrystallinefilmssizeinntext::journal::journal article::research article