Patterned growth of high aspect ratio silicon wire arrays at moderate temperature

Morin, ChristineKohen, DavidTileli, VasilikiFaucherand, PascalLevis, MichelBrioude, ArnaudSalem, BassemBaron, ThierryPerraud, Simon2016-04-222016-04-222016-04-22201110.1016/j.jcrysgro.2011.02.024https://infoscience.epfl.ch/handle/20.500.14299/125824High aspect ratio silicon wire arrays with excellent pattern fidelity over wafer-scale area were grown by chemical vapor deposition at moderate temperature, using a gas mixture of silane and hydrogen chloride. An innovative two-step process was developed for in situ doping of silicon wires by diborane. This process led to high p-type doping levels, up to 101810 19 cm-3, without degradation of the silicon wire array pattern fidelity. © 2011 Elsevier B.V. All rights reserved.Patterned growth of high aspect ratio silicon wire arrays at moderate temperaturetext::journal::journal article::research article