Jagsch, Stefan ThomasTrivino, Noelia VicoCallsen, GordonKalinowski, StefanRousseau, Ian MichaelCarlin, Jean-FrancoisButte, RaphaelHoffmann, AxelGrandjean, NicolasReitzenstein, Stephan2017-02-172017-02-172017-02-172016https://infoscience.epfl.ch/handle/20.500.14299/134376WOS:000392249800024We present a temperature dependent optical and quantum-optical characterization of close-to-ideal lasing in GaN-based nanobeam cavities. Measuring the photon statistics of emission allows us to prove high-beta lasing at room temperature, and thresholdless lasing at 156K. Thresholdless lasing is explained via temperature dependent carrier redistribution in the 0D/2D gain medium.High-beta lasingPhoton StatisticsNanobeamNitride on Silicontext::conference output::conference proceedings::conference paper