Plessky, V.Yandrapalli, S.Turner, P. J.Villanueva, L. G.Koskela, J.Hammond, R. B.2019-02-132019-02-132019-02-132019-01-2410.1049/el.2018.7297https://infoscience.epfl.ch/handle/20.500.14299/154462WOS:000457283900020In a free-standing 400-nm-thick platelet of crystalline ZY-LiNbO3, narrow electrodes (500 nm) placed periodically with a pitch of a few microns can eXcite standing shear-wave bulk acoustic resonances (XBARs), by utilising lateral electric fields oriented parallel to the crystalline Y-axis and parallel to the plane of the platelet. The resonance frequency of similar to 4800 MHz is determined mainly by the platelet thickness and only weakly depends on the electrode width and the pitch. Simulations show quality-factors (Q) at resonance and anti-resonance higher than 1000. Measurements of the first fabricated devices show a resonance Q-factor similar to 300, strong piezoelectric coupling similar to 25%, (indicated by the large Resonance-antiResonance frequency spacing, similar to 11%) and an impedance at resonance of a few ohms. The static capacitance of the devices, corresponds to the imaginary part of the impedance similar to 100 omega. This device opens the possibility for the development of low-loss, wide band, RF filters in the 3-6 GHz range for 4th and 5th generation (4G/5G) mobile phones. XBARs can be produced using standard optical photolithography and MEMS processes. The 3rd, 5th, 7th, and 9th harmonics were observed, up to 38 GHz, and are also promising for high frequency filter design.Engineering, Electrical & ElectronicEngineeringphotolithographycrystal resonatorsacoustic resonatorslithium compoundselectrodesbulk acoustic wave devicesq-factormicromechanical devicesmicrowave resonatorsmicrowave filterslithium niobatenarrow electrodesshear-wave bulk acoustic resonanceslateral electric fieldsresonance frequencyquality-factorsxbarlaterally-excited bulk-wave resonatorsfree-standing plateletcrystalline y-axisresonance q-factorpiezoelectric couplingresonance-antiresonance frequency spacinglow-loss filterswide band filtersrf filters4th generation mobile phones5th generation mobile phonesoptical photolithographymems processhigh frequency filterfrequency 50 ghzsize 5000 nmfrequency 30 ghz to 60 ghzsize 400 nmlinbo3text::journal::journal article::research article