van Staveren, J.Almudever, C. GarciaScappucci, G.Veldhorst, M.Babaie, M.Charbon, E.Sebastiano, F.2020-04-082020-04-082020-04-082019-01-0110.1109/ESSCIRC.2019.8902861https://infoscience.epfl.ch/handle/20.500.14299/168031WOS:000520410000006This paper presents a family of voltage references in standard 40-nm CMOS that exploits the temperature dependence of dynamic-threshold MOS, NMOS and PMOS transistors in weak inversion to enable operation over the ultra-wide temperature range from 4.2 K to 300 K. The proposed references achieve a temperature drift below 436 ppm/K over a statistically significant number of samples after a single-point trim and a supply regulation better than 1.7 %/V from a a supply as low as 0.99 V. These results demonstrate, for the first time, the generation of PVT-independent voltages over an ultra-wide temperature range using sub-1-V nanometer CMOS circuits, thus enabling the use of the proposed references in harsh environments, such as in space and quantum-computing applications.Engineering, Electrical & ElectronicEngineeringtransistorstext::conference output::conference proceedings::conference paper