Imaging by time-of-flight secondary ion mass spectrometry of plasma patterned metal and oxide thin films

Coullerez, G.Baborowski, J.Viornery, C.Chevolot, Y.Xanthopoulos, N.Ledermann, N.Muralt, P.Setter, N.Mathieu, H. J.2006-08-212006-08-212006-08-21200310.1016/S0169-4332(02)00730-4https://infoscience.epfl.ch/handle/20.500.14299/233504WOS:0001805273001203354Time-of-flight secondary ion mass spectrometry (ToF-SIMS) imaging is employed to characterize the surface of patterned noble metal (Pt) and titania (TiO2) thin films deposited on oxidized silicon wafers. ToF-SIMS is used to follow the different process steps during the thin films patterning as well as the post-processing cleaning. Both positive and negative ToF-SIMS modes reveal the presence of contaminants, due to the etching processes (Cl- Al-,(+)), but only on the etched surfaces. Elements due to the post-processing cleaning (K+, Na+, Pb+) and photoresist residues are also detected but on the entire wafer surface. The utility of these chemically well-defined titania/platinum patterns is demonstrated for the,selective adsorption of phosphonic acid derivatives. Typical fragments of phosphonic acid groups, i.e. PO2- and PO3- show their preferential adsorption on TiO2. (C) 2002 Elsevier Science B.V. All rights reserved.tof-simsimagingselective adsorptiontitaniaphosphonic acidecr/rf reactoractuatorsImaging by time-of-flight secondary ion mass spectrometry of plasma patterned metal and oxide thin filmstext::journal::journal article::research article