10Gb/s and 10km error-free transmission up to 100ºC with 1.3µm wafer-fused VCSELs

Mereuta, A.Suruceanu, G.Caliman, A.Iakovlev, V.Sirbu, A.Kapon, E.2009-07-312009-07-312009-07-31200910.1364/OE.17.012981https://infoscience.epfl.ch/handle/20.500.14299/41931WOS:00026839950007910-Gb/s modulation speed and transmission over 10-km SM fiber with BER < 10(-11) up to 100 degrees C temperature are achieved with optimized wafer-fused GaAs/AlGaAs-InP/InAlGaAs VCSELs incorporating re-grown tunnel junction. These VCSELs operate in the 1310-nm waveband and emit more than 1-mW single mode power in the full temperature range. (C) 2009 Optical Society of AmericaSingle-ModeOperationPower10Gb/s and 10km error-free transmission up to 100ºC with 1.3µm wafer-fused VCSELstext::journal::journal article::research article