Mertin, StefanNyffeler, ClemensMakkonen, TapaniHeinz, BerndMazzalai, AndreaSchmitz-Kempen, ThorstenTiedke, StephanPensala, TuomasMuralt, Paul2020-03-052020-03-052020-03-052019-01-0110.1109/ULTSYM.2019.8925964https://infoscience.epfl.ch/handle/20.500.14299/166994WOS:000510220100669Scandium doped aluminium nitride (ScAlN) gained much attention during last years, since its piezoelectric response is much enlarged as compared to pure AlN films. Above 30% Sc the films are of high interest for piezoMEMS sensing and actuation, ultrasound generation, as well as energy harvesting applications. In this work, piezo-performance uniformity maps are presented for 20% and 33% Sc containing films, sputter deposited on 200-mm wafers. Furthermore, we employ a new method to determine the electro-mechanical coupling k(t)(2). Coupling results for various Sc/(Sc+Al) concentration (0, 6, 20, 26, 33%) are shown. In addition, the dielectric constant epsilon(r) and dielectric loss tan delta, and the transversal and the longitudinal piezoelectric coefficients, e(31,f) and d(33,f,) were measured. The wafers show a high with-in-wafer uniformity (1 sigma uniformity < 2% for Sc20Al80N and < 1% for Sc33Al67N). The highest coupling k(t)(2) = 21.2% was achieved for a 33% Sc film. The presented Al-Sc property-uniformity maps provide a good foundation for ScAlN based MEMS device design and manufacturing.scandium doped aluminium nitridepiezoelectric coefficientselectro-mechanical couplingnon-destructive characterisationresonatorstext::conference output::conference proceedings::conference paper