Yang, JiabaoWang, TongLi, YaohuaPu, XingyuChen, HuiLi, YukeYang, BowenZhang, YixinZhao, JunsongCao, QiChen, XingyuanGhasemi, ShahnazHagfeldt, AndersLi, Xuanhua2022-08-012022-08-012022-08-012022-07-2310.1002/solr.202200422https://infoscience.epfl.ch/handle/20.500.14299/189678WOS:000829013900001Nickel oxide (NiOx) is a promising hole transport material in inverted organic-inorganic metal halide perovskite solar cells. However, its low intrinsic conductivity hinders its further improvement in device performance. Here, we employ a trimercapto-s-triazine trisodium salt (TTTS) as a chelating agent of Ni2+ in the NiOx layer to improve its conductivity. Due to the electron-deficient triazine ring, the TTTS complexes with Ni2+ in NiOx via a strong Ni2+-N coordination bond and increases the ratio of Ni3+:Ni2+. The increased Ni3+ concentration adjusts the band structure of NiOx, thus enhancing hole density and mobility, eventually improving the intrinsic conductivity of NiOx. As a result, the device with TTTS modification displays a champion power conversion efficiency (PCE) of 22.81%. The encapsulated device based on a modified-NiOx layer maintains 94% of its initial power output at the maximum power point and continuous one-sun illumination for 1000 h at 45 degrees C. In addition, the unencapsulated target devices also maintain 92% at 60 +/- 5% relative humidity and 25 degrees C in the air for 5000 h; and 91% at 85 degrees C in a nitrogen atmosphere for 1000 h. The research provides an effective strategy to enhance PCE and stability of inverted PSCs via modifying NiOx films with triazine molecule.Energy & FuelsMaterials Science, MultidisciplinaryMaterials Scienceadditive engineeringdevice stabilityintrinsic conductivityinverted perovskite solar cellsnickel oxidedoped nickel-oxideroom-temperatureinterfacestext::journal::journal article::research article