1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

Wang, TaifangMa, JunMatioli, Elison2019-02-222019-02-222019-02-22201810.1109/LED.2018.2842031https://infoscience.epfl.ch/handle/20.500.14299/1546811100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodestext::journal::journal article::research article