Najmzadeh, MohammadBouvet, DidierDobrosz, PeterOlsen, SarahIonescu, Adrian Mihai2009-06-112009-06-112009-06-11200910.1016/j.mee.2009.03.086https://infoscience.epfl.ch/handle/20.500.14299/40410WOS:000267460100114In this paper, we investigate the effect of different process parameters on oxidation-induced strain (OIS) into a doubly-clamped silicon nanowire FET to control and finally, enhance carrier mobility. Spacer technology together with sacrificial thermal oxidation were used to fabricate ≈100 nm wide Si NWs. The built-in tensile stress in the Si NWs was measured using micro-Raman spectroscopy and a maximum of 2.6 GPa was found.Oxidation-induced strain (OIS)Strain engineeringSi nanowireFP7Local oxidationLocal stressorCMOS boostertext::journal::journal article::research article