Duan, SiyuQin, FengChen, PengYang, XupengQiu, CaiyuHuang, JunweiLiu, GanLi, ZeyaBi, XiangyuMeng, FanhaoXi, XiaoxiangYao, JieIdeue, ToshiyaLian, BiaoIwasa, YoshihiroYuan, Hongtao2023-07-312023-07-312023-07-312023-06-1510.1038/s41565-023-01417-zhttps://infoscience.epfl.ch/handle/20.500.14299/199552WOS:001009980900002The Berry curvature dipole (BCD) is a key parameter that describes the geometric nature of energy bands in solids. It defines the dipole-like distribution of Berry curvature in the band structure and plays a key role in emergent nonlinear phenomena. The theoretical rationale is that the BCD can be generated at certain symmetry-mismatched van der Waals heterointerfaces even though each material has no BCD in its band structure. However, experimental confirmation of such a BCD induced via breaking of the interfacial symmetry remains elusive. Here we demonstrate a universal strategy for BCD generation and observe BCD-induced gate-tunable spin-polarized photocurrent at WSe2/SiP interfaces. Although the rotational symmetry of each material prohibits the generation of spin photocurrent under normal incidence of light, we surprisingly observe a direction-selective spin photocurrent at the WSe2/SiP heterointerface with a twist angle of 0 degrees, whose amplitude is electrically tunable with the BCD magnitude. Our results highlight a BCD-spin-valley correlation and provide a universal approach for engineering the geometric features of twisted heterointerfaces.The authors generate the Berry curvature dipole and valley-coupled spin photocurrent via interfacial symmetry engineering at the WSe2/SiP heterostructure, and can electrically tune such nonlinear optoelectronic phenomena via the gate bias.Nanoscience & NanotechnologyMaterials Science, MultidisciplinaryScience & Technology - Other TopicsMaterials Sciencevalley polarizationphasephotocurrentsmos2text::journal::journal article::research article