Menon, HeeraMorgan, Nicholas PaulHetherington, CrispinAthle, RobinSteer, MatthewThayne, IainMorral, Anna Fontcuberta, IBorg, Mattias2021-11-202021-11-202021-11-202021-11-0510.1002/pssa.202100467https://infoscience.epfl.ch/handle/20.500.14299/183089WOS:000714599400001InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very challenging due to its 19% lattice mismatch with Si. Herein, the integration of single-crystalline InSb microstructures on insulator-covered Si through rapid melt growth (RMG) is reported and specifically provides details on the fabrication process. The importance of achieving high-quality conformal capping layers at low thermal budget to contain the InSb melt is assessed when the sample is annealed. The importance of ensuring a pristine Si seed area to achieve single-crystalline InSb is illustrated and demonstrated here for the first time.Materials Science, MultidisciplinaryPhysics, AppliedPhysics, Condensed MatterMaterials SciencePhysicselectron backscatter diffraction (ebsd)insbrapid melt growth (rmg)single crystalsitemxrrchemical-vapor-depositionsilicon-nitrideiii-vdiffusionplasmaelementstext::journal::journal article::research article