Manufacture of micro-electro-mechanical-system using sacrificial layer made of silicon, useful for micro-electro-mechanical-system device architecture, e.g. radio-frequency capacitive switch and current switch
IONESCU, M.A.; FLUCKIGER, PH; HIBERT, C; FRITSCHI, R; POTT, V
2002

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Abstract

NOVELTY - A micro-electro-mechanical-system (MEMS) is manufactured by the use of a sacrificial layer that is made of silicon. USE - The invention is used in surface micromachining for the manufacture of a MEMS containing a suspended metal layer or MEMS device architecture. MEMS device is a suspended gate metal oxide semiconductor field effect transistor (SG-MOSFET). It is used as radio-frequency capacitive switch, current switch, radio-frequency tuneable capacitor, magnetic field sensor, accelerometer, and pressure sensor. (all claimed)

Details

Title Manufacture of micro-electro-mechanical-system using sacrificial layer made of silicon, useful for micro-electro-mechanical-system device architecture, e.g. radio-frequency capacitive switch and current switch
Author(s) IONESCU, M.A. ; FLUCKIGER, PH ; HIBERT, C ; FRITSCHI, R ; POTT, V
Date 2002
Keywords
Note Alternative title(s) : (en) Process for manufacturing mems
Other identifier(s) EPO Family ID: 27810646
Patent number(s) US2005227428 (A1)
AU2002322966 (A1)
WO03078299 (A1)
Laboratories CMI
TTO
Record Appears in Scientific production and competences > Non-academic units > TTO - Technology Transfer Office
Scientific production and competences > STI - School of Engineering > CMI - Center of MicroNanoTechnology
Work produced at EPFL
Patents
Record creation date 2006-10-18

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