Infoscience

Journal article

Metal/GaN reaction chemistry and their electrical properties

We investigated the reaction chemistry of metal contacts to GaN during annealing using X-ray photoelectron spectroscopy (XPS). GaN decomposition was estimated, using XPS, to occur in N-2 annealed Ni-alloy contacts at 550 degreesC. The reaction was greatly accelerated by the catalytic effect of Au and Pt. The decomposition was correlated with the rapid degradation of electrical properties during annealing. The results suggest that high-temperature applications may be critically limited by the degradation of metal contacts especially due to activated Ni reactivity in Ni-alloyed contacts. Meanwhile, the thermal stability of Ni/Au contact greatly improves by suppressing the activated Ni reactivity, which is able to be obtained by forming preferential Ni-O bonding through annealing in air.

    Keywords: FIELD-EFFECT TRANSISTORS ; P-TYPE GAN ; NI/AU CONTACT ; DIODES

    Note:

    Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang, South Korea. Acad Sinica, Inst Phys, Taipei 11529, Taiwan. SIFCOM, UMR 6176, CNRS, ENSICAEN, F-14050 Caen, France. Ecole Polytech Fed Lausanne, Inst Phys Nanostruct, CH-1015 Lausanne, Switzerland. Kim, CC, Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang, South Korea. chris@postech.ac.kr

    ISI Document Delivery No.: 862KF

    Times Cited: 0

    Cited Reference Count: 12

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    Reference

    Record created on 2006-10-03, modified on 2016-08-08

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