Micropipe evolution in silicon carbide

Micropipe bundling and twisting in SiC crystals was revealed using synchrotron x-ray phase sensitive radiography. The computer simulation of micropipe evolution during the crystal growth suggests that the bundled and twisted micropipes arise under the influence of stress fields from other neighboring micropipes. The annihilation of twisted dipoles is attributed to their transformation into semiloops. Reactions of micropipe coalescence lead to the generation of micropipes and/or the annihilation of initial micropipes, resulting in the decrease in their average density. (C) 2003 American Institute of Physics.


Publié dans:
Applied Physics Letters, 83, 11, 2157-2159
Année
2003
ISSN:
0003-6951
Mots-clefs:
Note:
Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea. Russian Acad Sci, Inst Problems Mech Engn, St Petersburg 199178, Russia. Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia. Acad Sinica, Inst Phys, Taipei, Taiwan. Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. Je, JH, Pohang Univ Sci & Technol, Dept Mat Sci & Engn, San 31 Hyoja Dong, Pohang 790784, South Korea.
ISI Document Delivery No.: 719XU
Autres identifiants:
Laboratoires:




 Notice créée le 2006-10-03, modifiée le 2018-03-18


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