Journal article

Synchrotron radiography and x-ray topography studies of hexagonal habitus SiC bulk crystals

Phase-sensitive synchrotron radiation (SR) radiography was combined with x-ray diffraction topography to study structural defects of SiC crystals. The particular bulk SiC crystals examined had a low micropipe density and a hexagonal habitus composed of prismatic, pyramidal, and basal faces well developed. X-ray diffraction topography images of the sliced (0001) wafers, which were formed due to the complex lattice distortions associated with defective boundaries, demonstrated the existence of two-dimensional defective boundaries in the radial direction, normal to the (0001) planes. In particular, those parallel to the <11 (2) over bar0> directions extended rather far from the seed. On the other hand, by phase-sensitive SR radiography the effect of micropipe collection was detected. Micropipes grouped mostly in the vicinities of the defective boundaries but rarely appeared between groups. Some general remarks about possible reasons for the development of such peculiar defect structures were made.

    Keywords: RADIATION


    Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 196140, Russia. Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang, South Korea. Russian Acad Sci, Inst Problems Mech Engn, St Petersburg 196140, Russia. Acad Sinica, Inst Phys, Taipei, Taiwan. Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. Je, JH, Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 196140, Russia.

    ISI Document Delivery No.: 599TN


    Record created on 2006-10-03, modified on 2017-05-12


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