Reactivity of Au with ultrathin Si layers: A photoemission study

We present a photoemission study on reactivity of the Au-Si system. We studied gold films evaporated atop ultrathin silicon layers previously deposited on GaAs. Following analysis of both the Si 2p core level and the Au 5d valence band spectra related response, we show that the reaction mechanism between Au and Si is affected by structural imperfections of the silicon layer. This is in sharp opposition to some current models of the reactivity mechanism. (C) 2001 American Institute of Physics.


Published in:
Journal of Applied Physics, 90, 1, 345-350
Year:
2001
ISSN:
0021-8979
Keywords:
Note:
Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan. Ecole Polytech Fed Lausanne, Inst Phys Appl, PHB Ecublens, CH-1015 Lausanne, Switzerland. Slovak Acad Sci, Inst Phys, SK-84228 Bratislava, Slovakia. Ivanco, J, Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Osaka 5670047, Japan.
ISI Document Delivery No.: 443UY
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 Record created 2006-10-03, last modified 2018-03-18


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