A spectromicroscopy study of the Al GaS interface: Evidence of band bending lateral inhomogeneities
We performed a spectromicroscopy experiment to find evidence of lateral inhomogeneities in the band bending for the Al/GaS system. Microimages of the interface tuned on the Al 2p con levels revealed localized chemical inhomogeneities in proximity of the edge of the Al overlayer. A careful analysis of the photoemission spectra supports these conclusions and relates the inhomogeneities to band bending variations. The micron-size lateral scale for these features is similar to that of other interfaces. (C) 1999 Elsevier Science B.V. All rights reserved.
Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. Univ Wisconsin, Ctr Xray Lithog, Madison, WI 53706 USA. Zacchigna, M, Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 210JT
Sp. Iss. SI
Record created on 2006-10-03, modified on 2016-08-08