A spectromicroscopy study of the Al GaS interface: Evidence of band bending lateral inhomogeneities

We performed a spectromicroscopy experiment to find evidence of lateral inhomogeneities in the band bending for the Al/GaS system. Microimages of the interface tuned on the Al 2p con levels revealed localized chemical inhomogeneities in proximity of the edge of the Al overlayer. A careful analysis of the photoemission spectra supports these conclusions and relates the inhomogeneities to band bending variations. The micron-size lateral scale for these features is similar to that of other interfaces. (C) 1999 Elsevier Science B.V. All rights reserved.


Published in:
Journal of Electron Spectroscopy and Related Phenomena, 103, 1-3, 671-675
Year:
1999
ISSN:
0368-2048
Keywords:
Note:
Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. Univ Wisconsin, Ctr Xray Lithog, Madison, WI 53706 USA. Zacchigna, M, Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 210JT
Sp. Iss. SI
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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