X-ray photoemission and photoreflectance study of Au ultrathin Si/n-GaAs Schottky contacts and hydrogen plasma treated semi-insulating GaAs surfaces
The paper presents room temperature photoreflectance measurements carried out on the Au/ultrathin Si/n-crystalline GaAs structure with the silicon interlayer thickness gradually changing from about 4-27 Angstrom prepared in situ under ultra-high-vacuum conditions. A continuous change of the phase shift of the corresponding photoreflectance signal of more than 180 degrees has been observed in the Eg-critical-point oscillation of GaAs depending on the Si interlayer thickness. The explanation of the effect is based on the composition changes of the Au/Si interface monitored by X-ray photoelectron spectroscopy. The photoreflectance results are compared to the photoreflectance signal phase changes observed on the semi-insulating GaAs surfaces exposed to the low-temperature hydrogen plasma. (C) 1999 Elsevier Science S.A. All rights reserved.
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Slovak Acad Sci, Inst Phys, Bratislava 84239, Slovakia. Slovak Acad Sci, Inst Elect Engn, Bratislava 84239, Slovakia. PHB Ecublens, EPFL, Inst Phys Appl, CH-1015 Lausanne, Switzerland. CNRS, Cristallog Lab, F-38042 Grenoble 09, France. Pincik, E, Slovak Acad Sci, Inst Phys, Dubravska Cesta 9, Bratislava 84239, Slovakia.
ISI Document Delivery No.: 210KC
Sp. Iss. SI
Record created on 2006-10-03, modified on 2016-08-08