Doping dependence of electronic structure in Bi2Sr2CaCu2O8+x

We report on angle-resolved photoemission and superconductor-insulator-superconductor tunneling measurements of the normal and superconducting states of Bi2Sr2CaCu2O8+x single crystal samples and Bi2Sr2CaCu2O8+x - native oxide- lead (S-I-S) tunnel junctions.


Published in:
High Temperature Superconductivity, 483, 304-309
Year:
1999
Publisher:
Aip Press
ISSN:
0094-243X
ISBN:
1-56396-880-0
Keywords:
Note:
Univ Wisconsin, Dept Phys, Madison, WI 53706 USA.Onellion, M, Univ Wisconsin, Dept Phys, 1150 Univ Ave, Madison, WI 53706 USA.
ISI Document Delivery No.: BN91R
Cited Reference Count: 27
Article
Conference on High Temperature Superconductivity
JAN 07-13, 1999
CORAL GABLES, FLORIDA
Univ Miami
AMERICAN INSTITUTE OF PHYSICS 500 SUNNYSIDE BOULEVARD, WOODBURY, NY 11797-2999 USA
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)