Interface states at semiconductor junctions

The experimental and theoretical progress in understanding the electronic structure and the related parameters of Schottky interfaces and heterojunctions is reviewed. Particular emphasis is devoted to the solution of several historical controversial points, to the impact of novel ab initio theoretical approaches, to new experimental techniques based on synchrotron light and free electron lasers, to the efforts towards controlled modifications of interface parameters and to the foreseeable future developments of this vigorously progressing and:technologically crucial field.


Published in:
Reports on Progress in Physics, 62, 5, 765-808
Year:
1999
ISSN:
0034-4885
Keywords:
Note:
Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. Margaritondo, G, Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 200NF
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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