Inhomogeneous and thickness-dependent chemical reactivity at GaSe-Si interfaces
Scanning photoelectron spectromicroscopy experiments on the edge of patterned Si overlayers on GaSe revealed the presence of an inhomogeneous reaction with a metallic-like Ga phase separation. The Si-Se chemically shifted components show lateral variations and a thickness-related SiSe2/SiSex (x = 0.5, 1, and 1.5) ratio on a micrometer scale. The dependence of the peak intensities on the overlayer thickness suggests an initial layer-by-layer coverage until approximate to 2 Angstrom, followed by a clustering growth mode. (C) 1999 American Institute of Physics. [S0021-8979(99)07111-X].
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Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. Almeida, J, Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 197FL
Record created on 2006-10-03, modified on 2016-08-08