Inhomogeneous and thickness-dependent chemical reactivity at GaSe-Si interfaces

Scanning photoelectron spectromicroscopy experiments on the edge of patterned Si overlayers on GaSe revealed the presence of an inhomogeneous reaction with a metallic-like Ga phase separation. The Si-Se chemically shifted components show lateral variations and a thickness-related SiSe2/SiSex (x = 0.5, 1, and 1.5) ratio on a micrometer scale. The dependence of the peak intensities on the overlayer thickness suggests an initial layer-by-layer coverage until approximate to 2 Angstrom, followed by a clustering growth mode. (C) 1999 American Institute of Physics. [S0021-8979(99)07111-X].


Published in:
Journal of Applied Physics, 85, 11, 7694-7696
Year:
1999
ISSN:
0021-8979
Keywords:
Note:
Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. Almeida, J, Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 197FL
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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