Coupled electron-hole dynamics at the Si/SiO2 interface

We report a new and surprising enhancement of the electric field at the Si/SiO2 interface following the cessation of intense pulsed near-infrared radiation. The phenomenon, measured by optical second-harmonic generation, occurs only for photon energies and oxide film thickness that exceed respective thresholds. We attribute the new effect to multiphoton hole injection into the oxide and to an asymmetry in electron and hole dynamics, in particular to distinctly different trapping and detrapping processes.


Published in:
Physical Review Letters, 81, 19, 4224-4227
Year:
1998
ISSN:
0031-9007
Keywords:
Note:
Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA. AT&T Bell Labs, Lucent Technol, Orlando, FL USA. Ecole Polytech Fed Lausanne, Dept Phys, CH-1015 Lausanne, Switzerland. N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA. N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA. N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA. Wang, W, Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA.
ISI Document Delivery No.: 139CW
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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