The growth and properties of single crystals of GaInTe2, a ternary chalcogenide semiconductor

Single crystals of GaInTe2 were grown from a melt and characterized by various experimental techniques, such as x-ray diffraction, x-ray photoelectron spectroscopy (XPS), and electrical and photoluminescence (PL) measurements. Our investigation evaluated important parameters of this challenging material. In particular, we studied here for the first time the electronic structure, the excitonic effects and the impurity bound states of GaInTe2, by means of XPS and by analysing dependences on the temperature and the excitation intensity of the PL spectra.


Published in:
Journal of Physics D-Applied Physics, 31, 12, 1433-1437
Year:
1998
ISSN:
0022-3727
Keywords:
Note:
Quena S Valley Univ, Dept Phys, CH-1015 Lausanne, Switzerland. Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. Univ Calif Berkeley, Ernest Orlando Lawrence Berkeley Lab, Berkeley, CA 94720 USA. Univ Bari, Dipartimento Fis, I-70126 Bari, Italy. Ist Nazl Fis Mat, I-70126 Bari, Italy. Fac Sci, Dept Phys, Sohag, Egypt. Mobarak, M, Quena S Valley Univ, Dept Phys, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: ZY742
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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