Infoscience

Journal article

Electrical characterization of Au/SiOx/n-GaAs junctions

The electrical behavior of Au/SiOx/n-GaAs Schottky structures has been studied using a statistical approach. II has been concluded that the obtained unusual electrical behavior is connected mainly with different Fermi-level pinning position and lateral microinhomogeneities of the barrier height induced by different average thickness of the SiOx interlayer along the wafer. The results of cross-sectional transmission electron microscopy and the temperature dependence of the electrical characteristics confirm this conclusion. (C) 1998 Elsevier Science Ltd. All rights reserved.

    Keywords: SCHOTTKY-BARRIER HEIGHT ; MOLECULAR-BEAM EPITAXY ; INTERFACIAL LAYER ; IV ; CHARACTERISTICS ; N-TYPE ; DIODES ; SILICON ; CONTACTS

    Note:

    Slovak Acad Sci, Inst Phys, SK-84228 Bratislava, Slovakia. Hungarian Acad Sci, Tech Phys Res Inst, H-1325 Budapest, Hungary. Univ Rome La Sapienza, Dipartimento Fis, I-00185 Rome, Italy. Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. CNR, Ist Metodol & Tecnol Microelettron, I-95121 Catania, Italy. Ivaneo, J, Slovak Acad Sci, Inst Phys, Dubravska Cesta 9, SK-84228 Bratislava, Slovakia.

    ISI Document Delivery No.: ZF234

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    Record created on 2006-10-03, modified on 2016-08-08

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