Schottky barrier height dependence on the silicon interlayer thickness of Au/Si/n-GaAs contacts: chemistry of interface formation study

This work reports on the X-ray photoemission spectroscopy (XPS) measurements of the As-rich GaAs(001) surface properties developing due to the different thicknesses of the undoped silicon overlayers. We analyzed the bond nature on the silicon-GaAs interface depending on the silicon thickness which was connected with observed variations in surface Fermi level positions. Further, the Au/Si/n-GaAs metal-semiconductor contacts were prepared on the studied structures. Measured changes in the Schottky barrier height for silicon thicknesses till approximately I nm are interpreted through the approach of the Schottky barrier height to Schottky limit due to decrease of the interface state densities on the Si/GaAs interface. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.

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Vacuum, 50, 3-4, 407-411
Slovak Acad Sci, Inst Phys, SK-84228 Bratislava, Slovakia. Ecole Polytech Fed Lausanne, PHB Ecublens, Inst Appl Phys, CH-1015 Lausanne, Switzerland. Univ Rome La Sapienza, Dipartimento Fis, I-00185 Rome, Italy. Ivanco, J, Slovak Acad Sci, Inst Phys, Dubravska Cesta 9, SK-84228 Bratislava, Slovakia.
ISI Document Delivery No.: 111GN

 Record created 2006-10-03, last modified 2018-03-17

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