Ballistic-electron emission and secondary photoelectron microscopy of the sulfur-passivated Pt-GaP(001) interface

Ballistic emission electron and X-ray photoelectron emission microscopy studies are presented for the sulfur-passivated Pt-GaP(001) buried metal-semiconductor interface. The topographic/ballistic images showed that the roughness of the metal-semiconductor samples after sulfur passivation and Pt deposition is higher than in the as-received substrate. The photoelectron emission microscope microimages showed a significant inhomogeneity as far as the interface chemical environment is concerned. The strongest inhomogeneity appeared to be related to the gallium, and these variations have a subtle effect on the P and Pt signals. These complementary techniques enabled us to correlate the surface topography and the interface transport variations, with the spatially resolved chemical information of the buried Pt-GaP metal-semiconductor interface. (C) 1998 Elsevier Science B.V. All rights reserved.

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Surface Science, 404, 1-3, 470-474
Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. CNR, Ist Struttura Mat, I-00044 Frascati, Rome, Italy. Univ Rome La Sapienza, Dipartimento Fis, INFM, I-00185 Rome, Italy. Almeida, J, Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: ZY342

 Record created 2006-10-03, last modified 2018-03-18

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