Laterally-resolved study of the Au/SiNx/GaAs(100) interface

We report a microscopic study of the Au/5 Angstrom SiNx/GaAs Schottky barrier based on scanning near-field optical microscopy. Photocurrent yield microimages taken at different photon energies reveal non-topographic features. Taking into account their dependence on photon energy and bias, such features are consistent with lateral variations of the local density of states related to defects. The results, therefore, confirm that lateral variations must be considered when analyzing semiconductor interfaces and of the corresponding devices. (C) 1998 Elsevier Science B.V.


Published in:
Applied Surface Science, 125, 1, 6-10
Year:
1998
ISSN:
0169-4332
Keywords:
Note:
Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. Univ Rome La Sapienza, Dipartimento Fis, INFM, I-00185 Rome, Italy. Univ Franche Comte, Lab Opt, F-25030 Besancon, France. Almeida, J, Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. almeida@dpmail.epfl.ch
ISI Document Delivery No.: ZB663
Laboratories:




 Record created 2006-10-03, last modified 2018-01-27


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