Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer

We report a modification by thin silicon nitride intralayers of the Au/n-GaAs)(100) Schottky barrier height. Thin intralayers were obtained by nitridation of evaporated Si films on decapped GaAs substrates in an argon-nitrogen mixture plasma. The nitridation was performed at a beam energy <40 eV, with 573 K sample temperature. Gold was deposited to study in situ the Schottky barrier formation process with x-ray photoelectron spectroscopy. Internal photoemission spectroscopy and current-voltage measurements were used to evaluate the barrier modification on fully formed interfaces. Such a modification was analyzed in terms of theoretical calculations of the dipole created by the substrate-intralayer bonds. (C) 1997 American Institute of Physics.


Publié dans:
Journal of Applied Physics, 81, 1, 292-296
Année
1997
ISSN:
0021-8979
Mots-clefs:
Note:
Cnr,ist nazl metodol & tecnol microelett,i-95121 catania,italy. slovak acad sci,inst phys,bratislava 84228,slovakia. Almeida, J, ECOLE POLYTECH FED LAUSANNE,INST APPL PHYS,CH-1015 ECUBLENS,LAUSANNE,SWITZERLAND.
ISI Document Delivery No.: WA947
Laboratoires:




 Notice créée le 2006-10-03, modifiée le 2018-03-18


Évaluer ce document:

Rate this document:
1
2
3
 
(Pas encore évalué)