Interface formation and chemical reactions on metal-GaTe(001) surfaces

We studied using x-ray photoelectron spectroscopy the deposition of Au, In, Ag and Al overlayers onto clean-cleaved GaTe(001) surfaces at room temperature. The first steps of the Schottky barrier formation on Au and In showed no interface reactions. Free Te release was observed after the deposition of 3.5 Angstrom of silver. On the other hand, the deposition of Al leads to an exchange chemical reaction where clustering dominates at high metal coverage.


Published in:
Helvetica Physica Acta, 70, 17-18
Year:
1997
ISSN:
0018-0238
Note:
Almeida, J, ECOLE POLYTECH FED LAUSANNE,INST PHYS APPL,CH-1015 LAUSANNE,SWITZERLAND.
ISI Document Delivery No.: YK816
Suppl. 2
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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