Novel spectromicroscopy: Pt-GaP studies by spatially resolved internal photoemission with near-field optics
The combination of internal photoemission and near-field optics is proposed as a generally applicable approach to study the lateral variations of solid interface properties such as energy barriers and electron-hole recombination rates. A successful test on Pt-GaP is described in which topographic and nontopographic phenomena are revealed, in particular recombination rate variations and small lateral changes of the Schottky barrier height. (C) 1996 American Institute of Physics.
Univ franche comte,lab opt,f-25030 besancon,france. Almeida, J, ECOLE POLYTECH FED LAUSANNE,PHB ECUBLENS,CH-1015 LAUSANNE,SWITZERLAND.
ISI Document Delivery No.: VM317
Record created on 2006-10-03, modified on 2016-08-08