Temperature-Dependence of Electronic States in (Tase4)(2)I
Angle-resolved photoemissions studies were conducted on single-crystal (TaSe4)(2)I samples above and below the charge-density-wave transition temperature (T-CDW) of 260 K. We observed a shift of the leading photoemission edge between 300 and 60 K consistent with resistivity measurements performed on the same sample: a band gap opens throughout the Brillouin zone below T-CDW. However, several aspects of the data are difficult to reconcile with any standard model.
Ecole polytech fed lausanne,inst genie atom,ch-1015 lausanne,switzerland. univ wisconsin,dept phys,madison,wi 53706. Terrasi, a, ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: RR288
Record created on 2006-10-03, modified on 2016-08-08