Temperature-Dependence of Electronic States in (Tase4)(2)I

Angle-resolved photoemissions studies were conducted on single-crystal (TaSe4)(2)I samples above and below the charge-density-wave transition temperature (T-CDW) of 260 K. We observed a shift of the leading photoemission edge between 300 and 60 K consistent with resistivity measurements performed on the same sample: a band gap opens throughout the Brillouin zone below T-CDW. However, several aspects of the data are difficult to reconcile with any standard model.


Published in:
Physical Review B, 52, 8, 5592-5597
Year:
1995
ISSN:
0163-1829
Keywords:
Note:
Ecole polytech fed lausanne,inst genie atom,ch-1015 lausanne,switzerland. univ wisconsin,dept phys,madison,wi 53706. Terrasi, a, ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: RR288
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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