Journal article

Temperature-Dependence of Electronic States in (Tase4)(2)I

Angle-resolved photoemissions studies were conducted on single-crystal (TaSe4)(2)I samples above and below the charge-density-wave transition temperature (T-CDW) of 260 K. We observed a shift of the leading photoemission edge between 300 and 60 K consistent with resistivity measurements performed on the same sample: a band gap opens throughout the Brillouin zone below T-CDW. However, several aspects of the data are difficult to reconcile with any standard model.


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