Evidence for a Photocurrent Fano Resonance in an Artificial Nanostructure

We present internal-photoemission (photocurrent) experimental evidence for a Fano resonance at an n-p GaAs homojunction with a 0.5-ML Si intralayer (delta doping). This is one of a very few cases in which Fano resonances have been observed in artificial nanostructures. Our results show that this fundamental class of phenomenona plays a relevant role in band-gap engineering, by affecting the transport and phototransport properties of delta-doping nanostructures.


Published in:
Physical Review B, 52, 4, R2265-R2268
Year:
1995
ISSN:
0163-1829
Keywords:
Note:
Dellorto, t, ecole polytech fed lausanne, phb ecublens, inst appl phys, ch-1015 lausanne, switzerland.
ISI Document Delivery No.: RM154
Laboratories:




 Record created 2006-10-03, last modified 2018-01-27


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