Morphological Effects in the Quantum Yield of Cesium Iodide
We demonstrated that polycrystalline cesium iodide (CsI) on large area Ni/Au coated printed board provides a quantum efficiency (QE) higher by a factor of 2 than the films deposited on the standard Cu/Au printed circuits. This is the most important result of the present systematic study of the QE lateral inhomogeneity for CsI on different substrates. We found a strong correlation between the QE lateral variation and the morphological homogeneity of the films. The QE was measured by UV photoelectron emission microscopy and spatially resolved X-ray photoemission, and the morphology studies were performed by secondary electron microscopy, X-ray diffraction and scanning tunneling microscopy.
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Ph ecublens,epfl,ipa,dp,ch-1015 lausanne,switzerland. sincrotrone trieste,i-34012 trieste,italy. cern,div ppe,ch-1211 geneva 23,switzerland. ist nazl fis nucl,i-70126 bari,italy.
ISI Document Delivery No.: RJ300
Record created on 2006-10-03, modified on 2016-08-08