Morphological Effects in the Quantum Yield of Cesium Iodide

We demonstrated that polycrystalline cesium iodide (CsI) on large area Ni/Au coated printed board provides a quantum efficiency (QE) higher by a factor of 2 than the films deposited on the standard Cu/Au printed circuits. This is the most important result of the present systematic study of the QE lateral inhomogeneity for CsI on different substrates. We found a strong correlation between the QE lateral variation and the morphological homogeneity of the films. The QE was measured by UV photoelectron emission microscopy and spatially resolved X-ray photoemission, and the morphology studies were performed by secondary electron microscopy, X-ray diffraction and scanning tunneling microscopy.


Published in:
Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment, 361, 3, 524-538
Year:
1995
ISSN:
0168-9002
Keywords:
Note:
Ph ecublens,epfl,ipa,dp,ch-1015 lausanne,switzerland. sincrotrone trieste,i-34012 trieste,italy. cern,div ppe,ch-1211 geneva 23,switzerland. ist nazl fis nucl,i-70126 bari,italy.
ISI Document Delivery No.: RJ300
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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