Free-Electron Laser Spectroscopy of Semiconductors and Interfaces
1994
Abstract
The broad tunability (1-10 mum) and megawatt regime peak intensity available from the Vanderbilt Free-Electron Laser is opening new avenues in semiconductor research. Initial experiments in nonlinear optical absorption and heterojunction band-edge discontinuity measurements are discussed in order to illustrate the flexibility of the free-electron laser as a research tool.
Details
Title
Free-Electron Laser Spectroscopy of Semiconductors and Interfaces
Author(s)
McKinley, J. T. ; Albridge, R. G. ; Barnes, A. V. ; Chen, G. C. ; Davidson, J. L. ; Languell, M. L. ; Polavarapu, P. L. ; Smith, J. F. ; Yang, X. ; Ueda, A. ; Tolk, N. ; Coluzza, C. ; Baudat, P. A. ; Dupuy, C. ; Gozzo, F. ; Iilegems, M. ; Martin, D. ; Moriergenoud, F. ; Rudra, A. ; Tuncel, E. ; Margaritondo, G.
Published in
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films
Volume
12
Issue
4
Pages
2323-2326
Date
1994
ISSN
0734-2101
Keywords
Note
Ecole polytech fed lausanne,ch-1015 lausanne,switzerland. Mckinley, jt, vanderbilt univ,dept phys & astron,box 1807 stn b,nashville,tn 37235.
ISI Document Delivery No.: NZ032
Part 2
ISI Document Delivery No.: NZ032
Part 2
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Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LSE - Laboratory of Photoelectron Spectroscopy
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2006-10-03