Na-Promoted Oxidation of Si - the Specific Oxidation Mechanism

The dramatic enhancement of the silicon room-temperature oxidation rate by a Na overlayer has been attributed to the spectator catalytic action of the alkali metal. In contrast, we show evidence that Na participates in the oxidation process binding an oxygen atom in a substoichiometric intermediate oxidation state. This causes preferential saturation of the semiconductor dangling bonds on the surface and a subsequent promotion of the oxide growth. We have, in fact, detected the Na 2p photoemission chemical shifts when bonds with an oxygen atom are established in a hybrid configuration.


Published in:
Physical Review B, 49, 4, 2943-2946
Year:
1994
ISSN:
0163-1829
Keywords:
Note:
Ecole polytech fed,inst phys appl,ph ecublens,ch-1015 lausanne,switzerland. Faraci, g, univ catania,dipartmento fis,consorzio interuniv fis mat,corso italia 57,i-95129 catania,italy.
ISI Document Delivery No.: MV089
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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