Internal Photoemission-Studies of Artificial Band Discontinuities at Buried Gaas(100) Gaas(100) Homojunctions

Internal photoemission phototransport measurements revealed 0.27+/-0.04 eV conduction- and valence-band discontinuities induced by a Si intralayer at p-GaAs(100)/n-GaAs(100) homojunctions. The interface dipole originating from the heterovalent character of the Si-GaAs bonds raises the bands of the GaAs overlayer above that of the GaAs subtrate.


Publié dans:
Applied Physics Letters, 64, 16, 2111-2113
Année
1994
ISSN:
0003-6951
Mots-clefs:
Note:
Lab tasc,i-34012 trieste,italy. univ minnesota,dept chem engn & mat sci,minneapolis,mn 55455. univ trieste,dipartimento fis,i-34127 trieste,italy. Dellorto, t, ecole polytech fed lausanne,ph ecublens,inst phys appl,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: NG495
Laboratoires:




 Notice créée le 2006-10-03, modifiée le 2018-03-18


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