Infoscience

Journal article

Internal Photoemission-Studies of Artificial Band Discontinuities at Buried Gaas(100) Gaas(100) Homojunctions

Internal photoemission phototransport measurements revealed 0.27+/-0.04 eV conduction- and valence-band discontinuities induced by a Si intralayer at p-GaAs(100)/n-GaAs(100) homojunctions. The interface dipole originating from the heterovalent character of the Si-GaAs bonds raises the bands of the GaAs overlayer above that of the GaAs subtrate.

    Keywords: INTERFACES ; OFFSETS ; HETEROSTRUCTURES ; LAYERS

    Note:

    Lab tasc,i-34012 trieste,italy. univ minnesota,dept chem engn & mat sci,minneapolis,mn 55455. univ trieste,dipartimento fis,i-34127 trieste,italy. Dellorto, t, ecole polytech fed lausanne,ph ecublens,inst phys appl,ch-1015 lausanne,switzerland.

    ISI Document Delivery No.: NG495

    Reference

    Record created on 2006-10-03, modified on 2016-08-08

Fulltext

  • There is no available fulltext. Please contact the lab or the authors.

Related material