Microscopic-Scale Lateral Inhomogeneities of the Schottky-Barrier-Formation Process

The interpretation of photoemission-spectromicroscopy studies of Au on GaSe requires a revision of established ideas about this interface, which has long been considered a prototype of Schottky-like systems. We find that the interface-formation process involves strong substrate-overlayer interactions, the release of free Ga, and the formation of interface species, and leads to a barrier height in total disagreement with the Schottky model. Furthermore, the space-resolving capabilities of our instruments revealed lateral inhomogeneities of the local overlayer thickness and of the local band bending.


Published in:
Physical Review B, 48, 23, 17163-17167
Year:
1993
ISSN:
1098-0121
Keywords:
Note:
Univ paris 11,syst dynam & topol lab,f-91405 orsay,france. univ wisconsin,ctr xray lithog,madison,wi 53706. Gozzo, f, ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: MN530
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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