Temperature-Dependence of the Heterojunction Band-Offset - Si on InP(110)
Dellorto, T.; Destasio, G.; Capozi, M.; Ottaviani, C.; Quaresima, C.; Perfetti, P.; Hwu, Y.; Margaritondo, G.
1993

Abstract

We present a photoemission study of the initial growth stages of amorphous Si on the InP(110) cleaved surface, performed at 120 K and compared with the room-temperature (RT) results. Deposition at low temperature gives a larger valence-band discontinuity with respect to RT and high-temperature (280-degrees-C) growth. This effect is explained by the smaller outdiffusion of In atoms in the silicon overlayer.

Details

Title Temperature-Dependence of the Heterojunction Band-Offset - Si on InP(110)
Author(s) Dellorto, T. ; Destasio, G. ; Capozi, M. ; Ottaviani, C. ; Quaresima, C. ; Perfetti, P. ; Hwu, Y. ; Margaritondo, G.
Published in Physical Review B
Volume 48
Issue 11
Pages 8035-8039
Date 1993
ISSN 0163-1829
Keywords
Note Univ wisconsin,ctr synchrotron radiat,madison,wi 53706. ecole polytech fed lausanne,ch-1015 lausanne,switzerland. Dellorto, t, cnr,ist struttura mat,via enrico fermi 38,i-00044 frascati,italy.
ISI Document Delivery No.: LY665
DOI https://doi.org/10.1103/PhysRevB.48.8035
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Laboratories LSE
LPRX
Record Appears in Scientific production and competences > SB - School of Basic Sciences > SB Archives > LSE - Laboratory of Photoelectron Spectroscopy
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date 2006-10-03

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