Photoelectron energy distribution spectra taken for the first time on micrometer-sized areas of cleaved GaAs(110) reveal rigid shifts from location to location in the photoemission core level peak energies, indicating band-bending changes on a microscopic scale.
Title
Microscopic-Scale Lateral Inhomogeneities of the Photoemission Response of Cleaved Gaas
Published in
Applied Physics Letters
Volume
63
Issue
1
Pages
63-65
Date
1993
ISSN
0003-6951
Note
Lawrence berkeley lab,ctr xray opt,berkeley,ca 94720. ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. Cerrina, f, univ wisconsin,ctr xray lithog,3731 schneider dr,stoughton,wi 53589.
ISI Document Delivery No.: LK406
Record creation date
2006-10-03