Microscopic-Scale Lateral Inhomogeneities of the Photoemission Response of Cleaved Gaas

Photoelectron energy distribution spectra taken for the first time on micrometer-sized areas of cleaved GaAs(110) reveal rigid shifts from location to location in the photoemission core level peak energies, indicating band-bending changes on a microscopic scale.


Published in:
Applied Physics Letters, 63, 1, 63-65
Year:
1993
ISSN:
0003-6951
Keywords:
Note:
Lawrence berkeley lab,ctr xray opt,berkeley,ca 94720. ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. Cerrina, f, univ wisconsin,ctr xray lithog,3731 schneider dr,stoughton,wi 53589.
ISI Document Delivery No.: LK406
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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