Photoemission by Synchrotron Radiation from Fe/Si, Co/Si and (Fe-Co)/Si Interfaces
In this work the interface between transition metals (Fe, Co) and Si has been investigated by soft X-ray photoemission spectroscopy. Synchrotron radiation has been used as photon source, measuring valence bands, Si2p and metal 3p core levels with high surface sensitivity. CoSi2 and beta-FeSi2 chemical phases have been obtained by thermal annealing (500-800-degrees-C) of thin films deposited onto room temperature Si<111> and <100> oriented wafers. Moreover, for the first time to our knowledge, a mixed (Fe0.785-Co0.25)/Si multilayered interface has been studied, showing remarkable differences with respect to single-metal deposition.
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Univ catania,dipartimento fis,i-95129 catania,italy. univ wisconsin madison,ctr synchrotron radiat,stoughton,wi 53589. ecole polytech fed lausanne,dept phys,phb ecublens,ch-1015 lausanne,switzerland. Terrasi, a, ist metodol & tecnol microelecttron,cnr,corso italia 57,i-95129 catania,italy.
ISI Document Delivery No.: HM075
Record created on 2006-10-03, modified on 2016-08-08