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Homojunction Band Discontinuities Induced by Dipolar Intralayers - Al-as in Ge

The possibility of inducing a band offset in the electronic structure of Ge homojunctions has been recently demonstrated using Ga-As double layers. A photoemission study is presented in which it is proved that a similar effect can be induced using Al-As as an intralayer. Specifically, an offset of 0.4 eV has been obtained. It is found that the cation-anion intralayer deposition sequence produces the same dipole as the anion-cation sequence. This result is similar to that found for large overlayer coverages in the case of Ga-As intralayers; but contrary to the Ga-As intralayers the present system does not exhibit a reversed discontinuity for small thicknesses.

    Keywords: INTERFACE

    Note:

    Ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. Marsi, m, univ wisconsin,dept phys,madison,wi 53706.

    ISI Document Delivery No.: JE681

    Part 1

    Reference

    Record created on 2006-10-03, modified on 2016-08-08

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