Homojunction Band Discontinuities Induced by Dipolar Intralayers - Al-as in Ge

The possibility of inducing a band offset in the electronic structure of Ge homojunctions has been recently demonstrated using Ga-As double layers. A photoemission study is presented in which it is proved that a similar effect can be induced using Al-As as an intralayer. Specifically, an offset of 0.4 eV has been obtained. It is found that the cation-anion intralayer deposition sequence produces the same dipole as the anion-cation sequence. This result is similar to that found for large overlayer coverages in the case of Ga-As intralayers; but contrary to the Ga-As intralayers the present system does not exhibit a reversed discontinuity for small thicknesses.


Published in:
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, 10, 4, 741-743
Year:
1992
ISSN:
0734-2101
Keywords:
Note:
Ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. Marsi, m, univ wisconsin,dept phys,madison,wi 53706.
ISI Document Delivery No.: JE681
Part 1
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)